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| MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE CM100BU-12H IC ................................................................... 100A VCES .......................................................... 600V Insulated Type 4-elements in a pack UL Recognized Yellow Card No. E80276 File No. E80271 APPLICATION UPS, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 72 55 0.25 20 17.5 19.1 11 14.4 P 4-5.5 MOUNTING HOLES 1.25 29 -0.5 +1.0 P 4 GuP EuP GvP EvP 11 N U GuN EuN V GvN EvN 18.7 GuP 74 0.25 91 G E G E N GuN 39.3 56 EuP GvP EvP CM EuN GvN G E G E CIRCUIT DIAGRAM EvN 16 1.25 U V 4-M4NUTS TC measured point 10 10 28 29 -0.5 +1.0 11 20 15 5 19.1 10.5 17.5 15 0.5 TC measured point TAB #110. t=0.5 26 8.1 LABEL 41 Feb. 2009 1 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- (Tj = 25C, unless otherwise specified) Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Weight VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C Conditions Ratings 600 20 100 200 100 200 400 -40 ~ +150 -40 ~ +125 2500 1.3 ~ 1.7 2.5 ~ 3.5 390 Unit V V A A A A W C C Vrms N*m N*m g (Note 1) (Note 1) -- -- Charged part to base plate, f = 60Hz, AC 1 minute Main terminals M4 screw Mounting M5 screw Typical value ELECTRICAL CHARACTERISTICS Symbol ICES Item (Tj = 25C, unless otherwise specified) Test Conditions VCE = VCES, VGE = 0V IC = 10mA, VCE = 10V VGE = VGES, VCE = 0V IC = 100A, VGE = 15V VCE = 10V VGE = 0V VCC = 300V, IC = 100A, VGE = 15V VCC = 300V, IC = 100A VGE = 15V RG = 6.3 Resistive load IE = 100A, VGE = 0V IE = 100A, die / dt = -200A / s Junction to case, IGBT part (Per 1/4 module) Junction to case, FWDi part (Per 1/4 module) Case to heat sink, conductive grease applied (Per 1/4 module) (Note 6) (Note 4) Tj = 25C Tj = 125C Collector cutoff current Gate-emitter VGE(th) threshold voltage Gate-leakage current IGES Collector-emitter VCE(sat) saturation voltage Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres QG Total gate charge td (on) Turn-on delay time tr Turn-on rise time td (off) Turn-off delay time tf Turn-off fall time VEC(Note 2) Emitter-collector voltage trr (Note 2) Reverse recovery time Qrr (Note 2) Reverse recovery charge Rth(j-c)Q Thermal resistance (Note 5) Rth(j-c)R Rth(c-f) Contact thermal resistance Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 6 -- 2.4 2.6 -- -- -- 200 -- -- -- -- -- -- 0.24 -- -- 0.1 Max 1 7.5 0.5 3.0 -- 8.8 4.8 1.3 -- 100 250 200 300 2.6 160 -- 0.31 0.7 -- Unit mA V A V nF nF nF nC ns ns ns ns V ns C K/W K/W K/W Note 1. 2. 3. 4. 5. 6. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. Case temperature (TC) measured point is shown in page OUTLINE DRAWING. Typical value is measured by using thermally conductive grease of = 0.9[W/(m * K)]. Feb. 2009 2 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) TRANSFER CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT IC (A) Tj=25C VGE=20 (V) 15 14 13 VCE = 10V 150 150 12 11 10 100 100 50 9 8 0 0 2 4 6 8 10 50 Tj = 25C Tj = 125C 0 0 4 8 12 16 20 COLLECTOR-EMITTER VOLTAGE VCE (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V Tj = 25C Tj = 125C 4 10 Tj = 25C 8 3 6 IC = 200A IC = 100A 2 IC = 40A 0 0 4 8 12 16 20 2 4 1 0 0 50 100 150 200 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 103 EMITTER CURRENT IE (A) 7 5 3 2 CAPACITANCE CHARACTERISTICS (TYPICAL) 101 CAPACITANCE Cies, Coes, Cres (nF) 7 5 3 2 Tj = 25C Cies 100 7 5 3 2 Coes 102 7 5 3 2 Cres 10-1 7 5 3 2 101 1.0 1.4 1.8 2.2 2.6 3.0 VGE = 0V 10-2 -1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2009 EMITTER-COLLECTOR VOLTAGE VEC (V) 3 MITSUBISHI IGBT MODULES CM100BU-12H HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING TIME CHARACTERISTICS (TYPICAL) 103 7 5 REVERSE RECOVERY TIME trr (ns) Tj = 125C tf 5 3 2 5 3 2 3 2 102 7 5 3 2 td(off) 102 7 5 3 2 trr Irr 101 7 5 3 2 td(on) VCC = 300V VGE = 15V RG = 6.3 3 5 7 102 2 3 57 tr 101 7 101 2 101 7 101 2 3 5 7 102 2 3 57 100 COLLECTOR CURRENT IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) 10-3 2 3 5 710-2 2 3 5 710-1 2 3 5 7 100 2 3 5 7 101 101 7 Single Pulse 5 3 TC = 25C 2 7 5 3 2 7 5 3 2 7 5 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.31K/ W 3 2 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 Per unit base = Rth(j - c) = 0.7K/ W 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-1 10-1 7 5 3 2 7 5 3 2 10-2 10-2 10-2 10-2 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) 10-3 10-3 10-5 2 3 5 710-4 2 3 5 7 10-3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) IC = 100A VCC = 200V 15 VCC = 300V 10 5 0 0 50 100 150 200 250 300 GATE CHARGE QG (nC) Feb. 2009 4 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 103 102 - di /dt = 200A /s 7 7 Tj = 25C SWITCHING TIMES (ns) |
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